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STS4DNFS30
N-channel - 30V - 0.044 - 4.5A SO-8 STripFETTM Power MOSFET plus schottky rectifier
General features
Type STS4DNFS30 Schottky VDSS 30V IF(AV) 4.5A RDS(on) <0.055 VRRM 30V ID 4.5A VF(MAX) 0.53V SO-8
Description
This product associates the latest low voltage STripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment.
Internal schematic diagram Applications
Switching application
Order codes
Part number STS4DNFS30 Marking S4DNFS30 Package SO-8 Packaging Tape & reel
July 2006
Rev 1
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Contents
STS4DNFS30
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STS4DNFS30
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Mosfet absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Value 30 20 4.5 3.2 13 2 Unit V V A A A W
PTOT
1. Pulse width limited by safe operating area
Table 2.
Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt
Schottky absolute maximum ratings
Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Critical rate of rise of reverse voltage TL=125C =0.5 tp=10ms Sinusoidal tp=2s F=1kHz tp=100s Value 30 10 4 75 1 1 10000 Unit V A A A A A v/s
Table 3.
Symbol
Thermal data
Parameter
(1)
Value 62.5 -55 to 150 -55 to 150
Unit C/W C C
Rthj-amb Thermal resistance junction-amb Mosfet Tstg Tj Storage temperature range Max Junction temperature
1. Mounted on FR-4 board (steady state)
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Electrical characteristics
STS4DNFS30
2
Electrical characteristics
(Tcase =25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 250A, VGS = 0 Min. 30 1 10 100 1 0.044 0.055 0.085 Typ. Max. Unit V A A nA V
VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125C Gate-body leakage current (VDS = 0) VGS = 20V
Gate threshold voltage VDS = VGS, ID = 250A Static drain-source on resistance VGS = 10V, ID = 2A VGS = 5V, ID = 2A
Table 5.
Symbol IR (1)
Static
Parameter Reverse leakage current Test conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C VR = VRRM IF = 2A IF = 4A Min. Typ. Max. 200 15 0.45 0.375 0.53 0.51 Unit A mA V V V V
6 0.325 0.43
VF (1)
Zero gate voltage drain current (VGS = 0) Tj = 25C Tj = 125C
1. Pulse test: tp=380s, < 2%. To evaluate the conduction losses use the following equation:
P = 0.24 x I F ( AV ) + 0.068I 2 ( RMS )
F
Table 6.
Symbol gfs Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =10V, ID =2A Min. Typ. 5 330 115 28 4.7 1.2 2.1 Max. Unit S pF pF pF nC nC nC
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 15V, ID = 4.5A, VGS = 5V (see Figure 13)
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STS4DNFS30
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test Conditions VDD = 15V, ID = 2A, RG = 4.7, VGS = 5V (see Figure 12) VDD = 15V, ID = 2A, RG = 4.7, VGS = 5V (see Figure 12) Min. Typ. 9 17 15 6 Max Unit ns ns ns ns
Table 8.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5A, VGS = 0 ISD = 4.5A, di/dt = 100A/s VDD = 15V, Tj = 150C (see Figure 17) 22 14.3 1.3 Test Conditions Min. Typ. Max. Unit 4.5 13 1.2 A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Electrical characteristics
STS4DNFS30
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Source-drain diode forward characteristics
Figure 6.
Static drain-source on resistance
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STS4DNFS30 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Normalized BVDSS voltage vs temperature
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Test circuits
STS4DNFS30
3
Test circuits
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STS4DNFS30
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STS4DNFS30
SO-8 MECHANICAL DATA
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
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STS4DNFS30
Revision history
5
Revision history
Table 9.
Date 19-Jul-2005
Revision history
Revision 1 First release Changes
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STS4DNFS30
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